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BC558 Transistor BJT PNP
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Description
Its structure is in plastic with three terminals. This transistor is capable of dissipating up to 500mW, even so, it can control devices that consume up to 100mA or that require voltages of up to 30VDC, as long as the device is not required to or over its maximum dissipation power.
Its joint is NPN, with an amplification factor (HFE) that varies according to the load to be used, varying between 110 and 800.
Main features:
- Encapsulation type: TO-92
- Supplementary transistor BC548, BC549
- Transistor equivalent to BC559, NTE159, C558, C558B, TBC558
- BJT PNP Type Bipolar Junction Transistor
- Collector Voltage - Emitter (VCE): -30V
- Collector Voltage - Base (VCB): -30V
- Emitter Voltage - Base (VEB): -5V
- Collector current (IC): -100mA
- Maximum dissipated power (PD): 500mW
- Maximum Gain (HFE): 800
- Maximum working frequency (ft): 150 MHz
