BC327 Transistor BJT PNP

BC327 Transistor BJT PNP -50V / -800mA TO-92, bipolar semiconductor of PNP joint. Its structure is in plastic with three terminals. This transistor is capable of dissipating up to 625MW, even so, it can control devices that consume up to 800mA or that require voltages up to 50VDC, as long as the device is not required up to or over its maximum dissipation power.

Its joint is PNP, with an amplification factor (HFE) that varies according to the load to be used, varying between 100 and 630.

Device designed to operate as an audio amplifier and driver or in Suicheo applications.

Main features:

• Encapsulation type: TO-92
• Supplementary transistor BC337, BC338
• Transistor equivalent to BC328, NTE159, C327, TBC327
• BJT PNP Type Bipolar Junction Transistor
• Collector Voltage - Emitter (VCE): -50V
• Collector Voltage - Base (VCB): -50V
• Emitter Voltage - Base (VEB): -5V
• Collector current (IC): -800mA
• Maximum dissipated power (PD): 625mW
• Maximum Gain (HFE): 630
• Maximum working frequency (ft): 100 MHz