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2sc945 NPN transitor
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Description
2SC945 BJT NPN 50V - 150mA TO-92 transistor, bipolar NPN joint semiconductor. Its structure is in plastic with three terminals. This transistor is of low power, capable of dissipating up to 250mW, even so, it can control devices that consume up to 150mA or that require voltages up to 50VDC, as long as the device is not required up to or over its power of maximum dissipation.
Its joint is NPN, with an amplification factor (HFE) that varies according to the load to be used, varying between 90 and 600.
Device designed to operate as an audio amplifier and high frequency oscillator.
Main features:
- Encapsulation type: TO-92
- Complementary transistor 2SA733, A733
- Transistor equivalent to C945, NTE85
- BJT-type NPN bipolar junction transistor
- Collector Voltage - Emitter (VCE): 50V
- Collector Voltage - Base (VCB): 60V
- Emitter Voltage - Base (VEB): 5V
- Collector current (IC): 150mA
- Maximum dissipated power (PD): 250 mW
- Maximum Gain (HFE): 600
- Maximum working frequency (ft): 190 MHz