BC337 Transistor BJT NPN

BC337 Transistor BJT NPN 45V - 100mA TO-92, bipolar NPN seal semiconductor. Its structure is made of plastic with three terminals. This transistor is capable of dissipating up to 500mW, even so, it can control devices that consume up to 100mA or that require voltages of up to 45VDC, as long as the device is not required up to or over its maximum dissipation power.

Its binding is NPN, with an amplification factor (HFE) that varies according to the load to be used, varying between 110 and 800.

Main features:

• Encapsulation type: TO-92
• BJT-type NPN bipolar junction transistor
• Collector-Voltage Emitter (VCE): 45V
• Voltage Manifold - Base (VCB): 50V
• Voltage Emitter - Base (VEB): 6V
• Current collector (IC): 100 mA
• Maximum dissipated power (PD): 500mW
• Maximum Gain (HFE): 800
• Maximum working frequency (ft): 300 MHz