BD135 NPN transistor

BD135 Transistor BJT NPN 45V - 1.5A TO-126, bipolar joint NPN semiconductor. Its structure is in plastic with three terminals. This transistor is capable of dissipating up to 12.5W, even so, it can control devices that consume up to 1.5A or that require voltages up to 45VDC, as long as the device is not required up to or over its maximum dissipation power.

Its joint is NPN, with an amplification factor (HFE) that varies according to the load to be used, varying between 40 and 250.

Device designed to operate as an audio amplifier and driver or in radio, television, electronic medicine equipment, high power and medium power amplifiers.

Main features:

• Encapsulation type: TO-126
• Complementary transistor BD136
• Transistor equivalent to NTE184, NTE375
• BJT-type NPN bipolar junction transistor
• Collector Voltage - Emitter (VCE): 45V
• Collector Voltage - Base (VCB): 45V
• Emitter Voltage - Base (VEB): 5V
• Collector current (IC): 1.5A
• Maximum Dissipated Power (PD): 12.5W
• Maximum Gain (HFE): 250
• Maximum working frequency (ft): 190 MHz