TIP3055 Transistor BJT NPN 100V - 15A Encapsulated TO-247

TIP3055 Transistor BJT NPN 60V - 15A TO-247, high power joint NPN bipolar semiconductor. This transistor is capable of dissipating up to 90W, even so, it can control devices that consume up to 15A or that require voltages of up to 60VDC, as long as the device is not required up to or over its maximum dissipation power.

Its joint is NPN, with an amplification factor (HFE) that varies according to the load to be used, varying between 5 and 100.

Device designed for signal processing, power management, portable devices, consumer electronics and industrial, can operate as audio amplifier and driver

Main features:

• Encapsulation type: TO-247
• TIP2955 complementary transistor
• Transistor equivalent to NTE392
• BJT-type NPN bipolar junction transistor
• Collector Voltage - Emitter (VCE): 60V
• Collector Voltage - Base (VCB): 100V
• Emitter Voltage - Base (VEB): 7V
• Collector current (IC): 15A
• Base current (IB): 7A
• Maximum Dissipated Power (PD): 90W
• Maximum Gain (HFE): 100
• Working frequency (ft): 2.5 MHz