TIP32 Transistor BJT PNP 100V - 3A Encapsulated TO-220

TIP32C Transistor BJT PNP -100V / -3A TO-220, high power bipolar joint PNP semiconductor. This transistor is capable of dissipating up to 40W, even so, it can control devices that consume up to 3A or that require voltages of up to 100VDC, as long as the device is not required up to or over its maximum dissipation power.

Its joint is PNP, with an amplification factor (HFE) that varies according to the load to be used, varying between 10 and 50.

Device designed for signal processing, power management, portable devices, consumer electronics and industrial, can operate as audio amplifier and driver

Main features:

• Encapsulation type: TO-220
• TIP31C complementary transistor
• Transistor equivalent to TIP32, TIP32A, TIP32B, NTE292
• BJT PNP Type Bipolar Junction Transistor
• Collector Voltage - Emitter (VCE): -100V
• Collector Voltage - Base (VCB): -100V
• Emitter Voltage - Base (VEB): -5V
• Collector current (IC): -3A
• Base current (IB): -1A
• Maximum Dissipated Power (PD): 40W
• Maximum Gain (HFE): 50
• Working frequency (ft): 3 MHz