TIP31 Transistor BJT NPN 100V - 3A Encapsulated TO-220

TIP31C Transistor BJT NPN -100V / -3A TO-220, high power bipolar joint PNP semiconductor. This transistor is capable of dissipating up to 40W, even so, it can control devices that consume up to 3A or that require voltages of up to 100VDC, as long as the device is not required up to or over its maximum dissipation power.

Its joint is NPN, with an amplification factor (HFE) that varies according to the load to be used, varying between 10 and 50.

Device designed for signal processing, power management, portable devices, consumer electronics and industrial, can operate as audio amplifier and driver

Main features:

• Encapsulation type: TO-220
• TIP32C complementary transistor
• BJT-type NPN bipolar junction transistor
• Collector Voltage - Emitter (VCE): -100V
• Collector Voltage - Base (VCB): -100V
• Emitter Voltage - Base (VEB): -5V
• Collector current (IC): -3A
• Base current (IB): -1A
• Maximum Dissipated Power (PD): 40W
• Maximum Gain (HFE): 50
• Working frequency (ft): 3 MHz