2N3055 NPN Power Transitor Encapsulated TO3

2N3055 BJT NPN 70V - 15A TO-3 transistor, bipolar joint NPN semiconductor. This transistor is high power, capable of dissipating up to 115W, can control devices that consume up to 15A or that require voltages of up to 70VDC.

Its joint is NPN, with an amplification factor (HFE) that varies according to the load to be used, varying between 20 and 70

This transistor is designed for power switching circuits, series and parallel regulators, output stages and audio amplifiers.

Main features:

• Encapsulation type: TO-3
• 2N2955 complementary transistor
• Transistor equivalent to NTE130
• BJT-type NPN bipolar junction transistor
• Collector Voltage - Emitter (VCE): 70V
• Collector Voltage - Base (VCB): 100V
• Emitter Voltage - Base (VEB): 7V
• Collector current (IC): 15A
• Maximum Dissipated Power (PD): 115W
• Maximum Gain (HFE): 70
• Maximum working frequency (ft): 2.5 MHz