2SD400 NPN transistor

2SD400 Transistor BJT NPN 25V - 1A TO-92L, bipolar NPN joint semiconductor. Its structure is in plastic with three terminals. This transistor is capable of dissipating up to 900MW, even so, it can control devices that consume up to 1A or that require voltages of up to 25VDC, as long as the device is not required up to or over its maximum dissipation power.

Its joint is NPN, with an amplification factor (HFE) that varies according to the load to be used, varying between 60 and 560.

Device designed to operate as low frequency audio amplifier.

Main features:

• Encapsulation type: TO-92L
• Complementary transistor 2SB544
• Transistor equivalent to D400, NTE382
• BJT-type NPN bipolar junction transistor
• Collector Voltage - Emitter (VCE): 25V
• Collector Voltage - Base (VCB): 25V
• Emitter Voltage - Base (VEB): 5V
• Collector current (Ic): 1A
• Maximum dissipated power (PD): 900 mW
• Maximum Gain (HFE): 560
• Maximum working frequency (ft): 180 MHz