2N2907 PNP BJT Transistor

2N2907A Transistor BJT PNP -60V / -600mA TO-92, bipolar semiconductor of PNP joint. Its structure is in plastic with three terminals. This transistor is low power, capable of dissipating up to 625mW, even so, it can control devices that consume up to 600mA or that require voltages of up to 60VDC, as long as the device is not required up to or over its power output. maximum dissipation.

Its joint is PNP, with an amplification factor (HFE) that varies according to the load to be used, varying between 100 and 300.

Main features:

• Encapsulation type: TO-92
• 2N2222/2N2222A complementary transistor
• Transistor equivalent to 2N2904/ 2N2905 / 2N2906 / 2N2907 / NTE159
• BJT PNP Type Bipolar Junction Transistor
• Collector Voltage - Emitter (VCE): -60V
• Collector Voltage - Base (VCB): -60V
• Emitter Voltage - Base (VEB): -5V
• Collector current (IC): -600mA
• Maximum dissipated power (PD): 625 mW
• Maximum Gain (HFE): 300
• Maximum working frequency (ft): 200 MHz