MOSFET Channel N 2N7000 Low Power

2N7000 MOSFET Channel N 60V - 200MA TO-92, these N-Channel field effect transistors are designed to minimize resistance in the state while providing robust, reliable and fast switching performance.

They can be used in most applications that require up to 200 mA in direct current and can supply pulsed currents up to 2A. These products are particularly suitable for low voltage and low current applications, such as small servo motor control, power MOSFET transistor controllers, and other switching applications.

Main features:

• Encapsulation type: TO-92
• Transistor equivalent to NTE491
• MOSFET transistor N channel
• Drain Voltage - Source (VDSS): 60V
• Drain Voltage - Door (VDGR): 60V
• Voltage Door - Source (VGS): 20V
• Drain current (id): 200mA
• Pulsed current in drain (IDM): 500mA
• Driving resistance (RDS): 5Ω
• Maximum dissipated power (PD): 400 mW