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IRF840 MOSFET General Purpose N Channel 8 Amp 500 Volt
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Description
IRF840 MOSFET Channel N 500V - 8A TO-220, is designed to withstand a specific level of energy in the avalanche break operation mode.
These power MOSFETs are designed for such applications
such as switching regulators, switching converters, motor controllers, relay controllers, and drivers for high-power bipolar switching.
These transistors that require high speed and low gate drive power (GATE), can be directly operated from integrated circuits.
Main features:
- Encapsulation type: TO-220
- Transistor equivalent to NTE2385
- MOSFET N-Channel Transistor
- Drain Voltage - Source (VDSS): 500V
- Drain Voltage - Gate (VDGR): 500V
- Gate Voltage - Source (VGS): ± 20V
- Drain Current (ID): 8A
- Pulsed current in Drain (IDM): 32A
- Driving resistance (RDS): 0.850 Ω
- Maximum Dissipated Power (PD): 125W
