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IRF530 MOSFET General purpose N channel 17 amps 100 volts
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Description
N-Channel IRF530N MOSFET transistor offering the best combination of fast switching, the design of this device is made for heavy use, low resistance and cost-effectiveness.
Main features:
- Low RDS (ON) (0.092Ω typical)
- ± 20V Door to Source Voltage
- 6..5 °C / W Thermal resistance, bonding to the environment
- 2.74 °C / W Thermal resistance, junction to box
- Applications: Power Management
- Transistor polarity: N channel
- Continuous drain current ID: 17 A
- Drain-source voltage VDS: 100 V
- RDS Activation Resistance(ON): 110 Mohm
- RDS Measuring VGS Voltage(ON): 100V
- VGS threshold voltage: 2 V
- PD power dissipation: 55W
- Minimum operating temperature: -55 °C
- Maximum operating temperature: 150 °C
- Encapsulated: TO-220
- Number of pins: 3
- Substitute
- nte2396
