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IRF540 MOSFET Channel N 28 Amps 100 Volts
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Description
IRF540 MOSFET Channel N 100V - 28A TO-220, is designed to withstand a specific level of power in the avalanche breakout mode of operation.
These power MOSFETs are designed for such applications
such as switching regulators, switching converters, motor controllers, relay controllers, and drivers for high-power bipolar switching.
These transistors that require high speed and low gate drive power (GATE), can be directly operated from integrated circuits.
Main features:
- Encapsulation type: TO-220
- Transistor equivalent to NTE2396A
- MOSFET transistor N channel
- Drain Voltage - Source (VDSS): 100V
- Drain Voltage - Door (VDGR): 100V
- Voltage Door - Source (VGS): ± 20V
- Current Drain (ID): 28A
- Pulsed current in drain (IDM): 110A
- Driving resistance (RDS): 0.077 Ω
- Maximum Dissipated Power (PD): 120W
