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IRF730 MOSFET Channel N 5.5 Amps 400 Volts
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Description
IRF730 MOSFET Channel N 400V - 5.5A TO-220, is designed to withstand a specific level of energy in the avalanche breakout mode of operation.
These power MOSFETs are designed for such applications
such as switching regulators, switching converters, motor controllers, relay controllers, and drivers for high-power bipolar switching.
These transistors that require high speed and low gate drive power (GATE), can be directly operated from integrated circuits.
Main features:
- Encapsulation type: TO-220
- Transistor equivalent to NTE67
- MOSFET N-Channel Transistor
- Drain Voltage - Source (VDSS): 400V
- Drain Voltage - Gate (VDGR): 400V
- Gate Voltage - Source (VGS): ± 20V
- Drain current (ID): 5.5A
- Pulsed current in Drain (IDM): 22A
- Driving resistance (RDS): 1 Ω
- Maximum Dissipated Power (PD): 75W
