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    2N5457 JFET Channel N

    Description

    These transistors are designed for use in applications such as switching power supplies, DC to DC converters, PWM motor drivers, bridge circuits, and general purpose switching applications. The JFET 2N5457 has a 10mA capacity, low input capacitance and door loading, low door input resistance. 

    Main features:

    • Polarity: Channel-N
    • Disruptive voltage: VBR -25 V
    • Drainage Idss Minimum Door Voltage Null: 1 A
    • Maximum IDSS Drainage Current, Null Gate Voltage: 5mA
    • Voltage of Vutoff Gate-Source VGS(OFF) Maximum: -6V
    • JFET type of transistor
    • Maximum working temperature: 125°C
    • PD power dissipation: 310 mW
    • Encapsulated TO-92
    • 3 pins
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