2N2222A Transistor BJT NPN Package 5 Units

2N2222A Transistor BJT NPN 40V - 600mA TO-92, Bipolar Semiconductor NPN. Its structure is made of plastic with three terminals. This transistor is low power, capable of dissipating up to 625mW, even so, it can control that they consume up to 600mA or that require voltages of up to 40VDC, as long as the device is not required to or over its dissipation power Maximum. Its binding is NPN, with an amplification factor (HFE) that varies according to the load to be used, varying between 100 and 300.

It is an extremely fast device, very useful in circuits where end devices with low consumption PWM control are required, such as 3V motors, with speed control. In addition, it can be used in low signal amplification circuits, logic state inverter (TTL or CMOS), control relays (relays) and low-power motors, among many other uses.

Main features:

• Encapsulation type: TO-92
• 2N2907/2N2907A Complementary Transistor
• Transistor equivalent to 2N2222/NTE123AP
• BJT-type NPN bipolar junction transistor
• Collector-Voltage Emitter (VCE): 40V
• Voltage Manifold - Base (VCB): 75V
• Voltage Emitter - Base (VEB): 6V
• Current collector (IC): 600 mA
• Maximum dissipated power (PD): 625 mW
• Maximum Gain (HFE): 300
• Maximum working frequency (ft): 250 MHz

Package 5 units