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    Transistor 2N3904 Package 5 Units

    Description

    2N3904 BJT NPN 40V - 200mA TO-92 transistor, bipolar NPN joint semiconductor. Its structure is made of plastic with three terminals. This transistor is low power, capable of dissipating up to 625mW, even so, it can control that they consume up to 200mA or that require voltages up to 40VDC, as long as the device is not required up to or over its dissipation power Maximum.

    Its binding is NPN, with an amplification factor (HFE) that varies according to the load to be used, varying between 100 and 300.

    It is an extremely fast device, very useful in circuits where end devices with low consumption PWM control are required, such as 3V motors, with speed control. In addition, it can be used in low signal amplification circuits, logic state inverter (TTL or CMOS), control relays (relays) and low-power motors, among many other uses.

    Main features:

    • Encapsulation type: TO-92
    • 2N3906 complementary transistor
    • Transistor equivalent to 2N3903 / NTE123AP
    • BJT-type NPN bipolar junction transistor
    • Collector-Voltage Emitter (VCE): 40V
    • Voltage Manifold - Base (VCB): 60V
    • Voltage Emitter - Base (VEB): 6V
    • Current collector (IC): 200 mA
    • Maximum dissipated power (PD): 625 mW
    • Maximum Gain (HFE): 300
    • Maximum working frequency (ft): 270 MHz
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