Transistor 2N3906 Package 5 Units

2N3906 Transistor BJT PNP -40V / -200mA TO-92, bipolar joint PNP. Its structure is in plastic with three terminals. This transistor is low power, capable of dissipating up to 625mW, even so, it can control devices that consume up to 200mA or that require voltages up to 40VDC, as long as the device is not required up to or over its power of maximum dissipation.

Its joint is PNP, with an amplification factor (HFE) that varies according to the load to be used, varying between 100 and 300.

Main features:

• Encapsulation type: TO-92
• 2N3904 complementary transistor
• Transistor equivalent to NTE159
• BJT PNP Type Bipolar Junction Transistor
• Collector Voltage - Emitter (VCE): -40V
• Collector Voltage - Base (VCB): -60V
• Emitter Voltage - Base (VEB): -6V
• Collector current (IC): -200mA
• Maximum dissipated power (PD): 625 mW
• Maximum Gain (HFE): 300
• Maximum working frequency (ft): 250 MHz