TIP41 Transistor BJT NPN 100V - 6A Encapsulated TO-220

NPN high power bipolar bipolar semiconductor. This transistor is capable of dissipating up to 65W, even so, it can control devices that consume up to 6A or that require voltages of up to 100VDC, as long as the device is not required to or over its maximum dissipation power.

Its binding is NPN, with an amplification factor (HFE) that varies according to the load to be used, varying between 15 and 75.

Device designed for signal processing, power management, portable devices, consumer electronics and industrial, can operate as audio amplifier and driver

Main features:

• Encapsulation type: TO-220
• TIP42C complementary transistor
• Transistor equivalent to TIP41, TIP41A, TIP41B, NTE331
• BJT-type NPN bipolar junction transistor
• Collector-Voltage Emitter (VCE): 100V
• Voltage Manifold - Base (VCB): 100V
• Voltage Emitter - Base (VEB): 5V
• Collector current (IC): 6A
• Base current (IB): 2A
• Maximum Dissipated Power (PD): 65W
• Maximum Gain (HFE): 75
• Working frequency (ft): 3MHz