TIP122 Transistor Darlington NPN 100V - 5A Encapsulated TO-220

TIP122 Darlington transistor BJT NPN 100V - 5A TO-220, high power bipolar NPN joint semiconductor. This transistor is capable of dissipating up to 65W, even so, it can control devices that consume up to 5A or that require voltages up to 100VDC, as long as the device is not required up to or over its maximum dissipation power.

Its joint is NPN, with an amplification factor (HFE) of 1000.

Device designed for signal processing, power management, consumer electronics and industrial, can operate as power audio amplifier and driver, motor control, relay drivers (rele) and solenoids.

Main features:

Encapsulation Type: TO-220Transistor Complementary TIP127Transistor Equivalent to NTE261Darlington transistor BJT type NPN collector - Emitter (VCE): 100V Voltage Voltage Collector - Base (VCB): 100V Emitter Voltage - Base (VEB): 5V Collector Current (IC): 5Base Current (IB): 120Maximum Power Dissipated (PD): 65WMaximum Gain (HFE): 1000