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    TIP117 Transistor Darlington PNP 100V - 2A Encapsulated TO-220 TIP117 Transistor Darlington PNP 100V - 2A Encapsulated TO-220
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    TIP117 Transistor Darlington PNP 100V - 2A Encapsulated TO-220

    Description

    TIP117 T-type power transistor designed for use in general purpose amplification applications and for low-speed switching applications.

    Main features:

    • High direct current gain (HFE = 2500 typical at Ic = 4A)
    • Manifold-Imiter Holding Voltage (VCE (SUS) = 100V Minimum at 100mA)
    • low saturation voltage collector-emitter
    • with Darlington
    • TIP110, TIP111, TIP112 add-ons
    • Transistor polarity: PNP
    • VCBO Base Collector Voltage: 100V
    • VCEO Emitter Collector Voltage: 1060 V
    • Vebo Base Emitter Voltage: 5V
    • DC collector IC: 2 A
    • PC Collector Power Dissipation (TC=25°C): 50 W
    • HFE direct current gain: 1000 HFE
    • Minimum operating temperature: -65 °C
    • Maximum operating temperature: 150 °C
    • Encapsulated: TO-220
    • 3 pins
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