TIP112 Transistor Darlington NPN 100V - 2A Encapsulated TO-220

TIP112 Transistor Darlington BJT NPN 100V - 2A TO-220, high power bipolar NPN joint semiconductor. This transistor is capable of dissipating up to 50W, even so, it can control devices that consume up to 2A or that require voltages up to 100VDC, as long as the device is not required up to or above its maximum dissipation power.

Its joint is NPN, with an amplification factor (HFE) of 1000.

Device designed for signal processing, power management, consumer electronics and industrial, can operate as power audio amplifier and driver, motor control, relay drivers (rele) and solenoids.

Main features:

• Encapsulation type: TO-220
• TIP117 complementary transistor
• Transistor equivalent to NTE261
• Darlington bipolar junction transistor NPN type
• Collector Voltage - Emitter (VCE): 100V
• Collector Voltage - Base (VCB): 100V
• Emitter Voltage - Base (VEB): 5V
• Collector current (IC): 2A
• Base current (Ib): 50mA
• Maximum Dissipated Power (PD): 50W
• Maximum Gain (HFE): 1000