BC557 Transistor BJT PNP

BC557 Transistor BJT PNP -45V / -100mA TO-92, bipolar semiconductor of PNP joint. Its structure is in plastic with three terminals. This transistor is capable of dissipating up to 500mW, even so, it can control devices that consume up to 100mA or that require voltages of up to 45VDC, as long as the device is not required up to or over its maximum dissipation power.

Its joint is NPN, with an amplification factor (HFE) that varies according to the load to be used, varying between 110 and 800.

Main features:

• Encapsulation type: TO-92
• Supplementary transistor BC547, BC550
• Transistor equivalent to BC558, BC559, BC560, NTE159, C557, TBC557
• BJT PNP Type Bipolar Junction Transistor
• Collector Voltage - Emitter (VCE): -45V
• Collector Voltage - Base (VCB): -50V
• Emitter Voltage - Base (VEB): -5V
• Collector current (IC): -100mA
• Maximum dissipated power (PD): 500mW
• Maximum Gain (HFE): 800
• Maximum working frequency (ft): 150 MHz